TVR1J

TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications (fast recovery) Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs · · · Maximum Ratings (Ta = 25°C) Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.5 10 (50 Hz) -40~125 -40~125 A A °C °C V Unit JEDEC JEITA TOSHIBA ― ― 3-3C1A Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Symbol VFM IRRM trr (1) trr (2) Test Condition IFM = 0.5 A VRRM = Rated IF = 20 mA, IR = 1 mA IF = 100 mA, IR = 100 mA Weight: 0.3 g (typ.) Min ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ 0.3 Max 1.2 10 2.0 ¾ Unit V mA ms Marking Type Code Lot No. Color: Silver Month of manufacture Year of manufacture Cathode Mark January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture VR 1J Code VR1B VR1G VR1J Type TVR1B TVR1G TVR1J 1 2002-09-18 TVR1B,TVR1G,TVR1J iF – vF 20 10 5 3 125°C 200 Ta max – IF (AV) Maximum allowable ambient temperature Ta max (°C) (A) Instantaneous on-state current iF 160 120 Resistive and inductive load 80 Capacitive load 40 1 0.5 0.3 Tj = 25°C 0.1 0.4 0.8 ...