TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
U...
Description
TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.5 10 (50 Hz) -40~125 -40~125 A A °C °C V Unit
JEDEC JEITA TOSHIBA
― ― 3-3C1A
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Symbol VFM IRRM trr (1) trr (2) Test Condition IFM = 0.5 A VRRM = Rated IF = 20 mA, IR = 1 mA IF = 100 mA, IR = 100 mA
Weight: 0.3 g (typ.)
Min ¾ ¾ ¾ ¾
Typ. ¾ ¾ ¾ 0.3
Max 1.2 10 2.0 ¾
Unit V mA ms
Marking
Type Code Lot No. Color: Silver Month of manufacture Year of manufacture Cathode Mark January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture VR 1J Code VR1B VR1G VR1J Type TVR1B TVR1G TVR1J
1
2002-09-18
TVR1B,TVR1G,TVR1J
iF – vF
20 10 5 3 125°C 200
Ta max – IF (AV)
Maximum allowable ambient temperature Ta max (°C)
(A)
Instantaneous on-state current iF
160
120 Resistive and inductive load 80 Capacitive load 40
1 0.5 0.3
Tj = 25°C
0.1 0.4
0.8
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