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TV2216FK

Dynex Semiconductor

Fast Recovery Diode

TV22..F TV22..F Fast Recovery Diode Replaces March 1998 version, DS4210-2.2 DS4210-3.0 January 2000 APPLICATIONS s Ind...



TV2216FK

Dynex Semiconductor


Octopart Stock #: O-302344

Findchips Stock #: 302344-F

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Description
TV22..F TV22..F Fast Recovery Diode Replaces March 1998 version, DS4210-2.2 DS4210-3.0 January 2000 APPLICATIONS s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 1600V IF(AV) 305A IFSM 5000A Qr 70µC trr 3.2µs FEATURES s Thermal Fatigue Free Pressure Contact s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions TV22 16F M or K VRSM = VRRM + 100V 1600 TV22 14F M or K 1400 TV22 12F M or K 1200 TV22 10F M or K 1000 TV22 08F M or K 800 TV22 06F M or K 600 For 3/4" 16 UNF thread, add suffix K, e.g. TV22 16FK. For M16 thread, add suffix M, e.g. TV22 16FM. For stud anode add 'R' to type number, e.g. TV22 16FMR. Outline type codes: DO9. See Package Details for further information. CURRENT RATINGS Symbol IF(AV) IF(RMS) Parameter Mean forward current RMS value Conditions Half wave resistive load, Tcase = 65oC Tcase = 65oC Max. 305 346 Units A A 1/7 TV22..F SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing A2s 125 x 103 A2s kA Conditions Max. 5.0 Units kA THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Tvj Tstg Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature ...




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