GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Description
The TSTS730. series are...
Description
TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Description
The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.
Features
D D D D D D
High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors
94 8642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W
x
x x
x
Tcase
x 25 °C
Document Number 81048 Rev. 2, 20-May-99
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TSTS730.
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA
x x
Symbol VF ...
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