UTC MPSH10
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSH10 is desinged for using a...
UTC MPSH10
NPN EPITAXIAL SILICON
TRANSISTOR
HIGH VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHf Mixer in a tuner of a TV receiver.
1
TO-92
1: EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
RATING
30 25 3 250 50 150 -55 ~ +150
UNIT
V V V mW mA °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Collector-emitter on voltage DC current gain Output capacitace Current gain bandwidth product
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(ON) hFE Cob fT
TEST CONDITIONS
Ic=100µA Ic=1mA IE=10µA VCB=25V VEB=2V IC=4mA,IB=400µA VCE=10V,IC=4mA VCE=10V,IC=4mA,f=100MHZ VCE=10V,f=1MHZ VCE=10V,IC=4mA,f=100MHZ
MIN
30 25
TYP
MAX
UNIT
V V V nA nA mV mV pF MHZ
3 100 100 500 950 60 0.7 650
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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