UTCD965ASS

UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V 2 1 APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 3 MARKING(D965SS) MARKING(D965ASS) SOT-23 D65 D65A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage D965SS D965ASS Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATING 40 20 30 7 750 5 150 -65 ~ +150 UNIT V V V mW A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage D965SS D965ASS Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO TEST CONDITIONS Ic=100µA,IE=0 Ic=1mA,IB=0 MIN 40 20 30 7 TYP MAX UNIT V V V nA nA IE=10µA,Ic=0 VCB=10V,IE=0 VEB=7V,Ic=0 100 100 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R206-016,B UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR DC current gain(note) hFE VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A 200 230 150 800 PARAMETER Collector-emitter saturation voltage Current gain bandwidth product Output capacitance SYMBOL VCE(sat) fT Cob TEST CONDITIONS Ic=3A, IB= ...