UTC2SB772S

UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882S TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation( Tc=25°C) Collector Dissipation( Ta=25°C) Collector Current(DC) Collector Current(PULSE) Base Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG VALUE -40 -30 -5 10 1 -3 -7 -0.6 150 -55 ~ +150 UNIT V V V W W A A A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMBOL TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN TYP MAX -1000 -1000 UNIT nA nA ICBO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 100-200 P 160-320 E 200-400 UTC UNISONIC TECHNOLOGIES CO. LTD 1 ...