UT62256C

 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT62256C is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62256C is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT62256C operates from a single 5V power supply and all inputs and outputs are fully TTL compatible UT62256C FEATURES Access time : 35/70ns (max.) Low power consumption: Operating : 40/30 mA (typical.) Standby : 3mA (typical) normal 2uA (typical) L-version 1uA (typical) LL-version Single 5V power supply All inputs and outputs are TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) Package : 28-pin 600 mil PDIP 28-pin 330 mil SOP 28-pin 8mmx13.4mm STSOP FUNCTIONAL BLOCK DIAGRAM A4 A3 A14 A13 A12 A7 A6 A5 A8 ROW DECODER PIN CONFIGURATION A14 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE . . . MEMORY ARRAY 512 ROW S × 512 COLUMNS A7 A13 A8 A9 A11 OE VCC VSS A6 A5 A4 A3 A2 A1 A0 I/O1 UT62256C A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 . I/O1 . . I/O8 . . COLUMN I/O I/O2 I/O3 Vss . . . . I/O CONTROL . . . COLUMN DECODER LOGIC CONTROL PDIP/SOP OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 A10 CE WE OE A10 A9 A11 A2 A1 A0 A11 A9 A8 A13 CE I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/...