Dual P-Channel 2.5V Specified PowerTrench MOSFET
USB10H
February 1999
USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
These P-Channel 2.5V...
Description
USB10H
February 1999
USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V
Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications Load switch Battery protection Power management
D2 S1 D1
4
3
5
2
G2
SuperSOT TM -6
S2 G1
TA = 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
-20 ±8
(Note 1a)
Units
V V A W
-1.9 -5 0.96 0.9 0.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
°C/W ...
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