UPG2009TB

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION L-band digital cellular or cordless telephone BuletoothTM, W-LAN and WLL applications ORDERING INFORMATION Part Number µPG2009TB-E3 Package 6-pin super minimold Marking G2U Supplying Form Embossed tape 8 mm wide Pin 1, 2, 3 face the perforation side of the tape Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2009TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices repr...