WIDE-BAND AMPLIFIER
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG1...
Description
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers.
available in chip form. Both devices are
PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same
frequency band. These devices are most suitable for the IF stage of microwave communication system and the measurement equipment.
FEATURES
Wide band : f = 50 MHz to 3 GHz
ORDERING INFORMATION
PART NUMBER FORM chip chip
PPG100P PPG101P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PPG100P
Drain Voltage Gate Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VGG Vin Pin Ptot
*1 *2
PPG101P
+10 ð8 ð5 to +0.6 +15 1.5 ð65 to +125 ð65 to +175 V V V dBm W °C °C
+8 ð8 ð3 to +0.6 +15 1.5 ð65 to +125 ð65 to +175
Topr Tstg
*1 Mounted with AuSn hard solder *2 The temperature of base material baside the chip
Document No. P12402EJ2V0DS00 (2nd edition) (Previous No. IC-3144) Date Published February 1997 N Printed in Japan
©
1992
PPG100P, PPG101P
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PPG100P (VDD = +5 V, VGG = ð5 V)
CHARACTERISTICS Drain Current Gate Current Power Gain Gain Flatness Noise Figure Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD IGG Gp 14 MIN. 30 TYP. 45 0.7 16 r1.5 2.7 7 7 30 +3 10 10 40 +6 3.5 MAX. 60 1.5 UNIT mA mA dB dB dB dB dB dB dBm...
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