UPF1N100

580 Pleasant Street Watertown, MA 02472 Phone:(617) 926-0404 F A X : (617) 924-1235 UPF1N100 Features Rugged POWERMITE 3 Surface Mount Package Low On-State Resistance Avalanche and Surge Rated High Frequency Switching Ultra Low Leakage current UIS rated Available with Lot Acceptance Testing SURFACE MOUNT N – CHANNEL MOSFET Description This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package. Maximum Ratings PARAMETER SYMBOL VALUE 1000 Drain-to-Source Voltage VDSS VGS +/- 20 Gate- to -Source Voltage Continuous Drain Current @ TC = 25°C ID1 1.0 Continuous Drain Current @ TC=100°C ID2 0.27 1.0 Avalanche Current IAR 3.5 Repetitive Avalanche Energy EAR 120 Single Pulse Avalanche Energy EAS Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125 Steady-state Thermal Resistance, Junction-to-Tab RθJ-TAB 2.5 UNIT Volts Volts Amps Amps Amps mJ mJ °C °C/Watt Static Electrical Characteristics SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IGSS1 IGSS2 IGSS3 CHARACTERISTICS / TEST CONDITIONS Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA) Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=37°C ) Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=25°C ) Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25°C ) Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37°C) Drain to Source ON-State Resistance (VGS=7V,...