VHB40-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB40-12S is Designed for
PACKAGE STYLE .380 4L STUD
.1...
VHB40-12S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VHB40-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
Omnigold™ Metalization System
B
ØC
D
H
I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 5.0 A 36 V 18 V 4.0 V 70 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.9 OC/W
O O O
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10717
O
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICES hFE Cob GP ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 28 V
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 36 18 4.0 5.0
UNITS
V V V mA --pF dB %
VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V
IC = 5.0 A f = 1.0 MHz POUT = 40 W f = 175 MHz
20
200 135
8.5 60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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