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vhb2512f

Part Number	vhb2512f
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Features	• Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCB...
Published	Apr 16, 2005
Datasheet	vhb2512f PDF File

Features

• Common Emitter
• PG = 10 dB at 25 W/175 MHz
• Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W DIM A B C D E F...

Similar Datasheet

vhb2512f NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

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