VHB25-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28F is Designed for
PACKAGE STYLE .380 4L FLG
.11...
VHB25-28F
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VHB25-28F is Designed for
PACKAGE STYLE .380 4L FLG
.112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
Omnigold™ Metalization System
B
C D
MAXIMUM RATINGS
IC VCBO VEBO VCEO PDISS TJ TSTG θ JC
O
F
E H I
G
4.0 A 65 V 4.0 V 35 V 40 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 4.4 OC/W
O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10724
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE Cob fT PG ηC
TC = 25 C
O
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IE = 10 mA VE = 30 V VCE = 5.0 V VCB = 28 V VCE = 10 V VCC = 28 V IC = 200 mA POUT = 25 W IC = 200 mA f = 1.0 MHz f = 100 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
35 65 4.0 2.0 5.0 --50 250 8.5 60
UNITS
V V V mA --pF MHz dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...
