VHB25-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-12F is Designed for
PACKAGE STYLE .380 4L FLG
B ....
VHB25-12F
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VHB25-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
Omnigold™ Metalization System
C D F E H I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 3.5 OC/W
O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
G
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10714
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 50 mA IC = 15 mA
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18 36 4.0 5.0
UNITS
V V V mA --pF dB
IE = 5.0 mA VCB = 15 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 25 W IC = 250 mA f = 1.0 MHz f = 175 MHz
20
--110
10 60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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