VHB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB100-12 is Designed for
PACKAGE STYLE .500 6L FLG
C A...
VHB100-12
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VHB100-12 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
Omnigold™ Metalization System
B G .725/18,42 F
E
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
K H DIM MINIMUM
inches / mm
M L
20 A 36 V 18 V 36 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 OC/W
O O O O
A B C D E F G H I J K L M N
J
I
MAXIMUM
inches / mm
.150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05
.160 / 4.06
.220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43
ORDER CODE: ASI10719
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICES hFE COB PG ηC
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 100 W IC = 5.0 A f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
18 36 36 4.0 15 10 420 6.0 60
UNITS
V V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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