VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
...
VHB1-12T
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC
O
F
400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 OC -65 C to +200 C -65 OC to +200 OC 20 OC/W
O
DIM A B C D E F G H
G
H
MINIMUM
inches / mm
MAXIMUM
inches / mm
.200 / 5.080 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .016 / 0.407 .020 / 0.508 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600
ORDER CODE: ASI10711
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVEBO ICEO hFE VCE(SAT) COB PG ηC
TC = 25 C
O
NONETEST CONDITIONS
IC = 5.0 mA IC = 5.0 mA IE = 100 µA VCE = 12 V VCE = 5.0 V IC = 100 mA VCB = 12.5 V VCE = 12.5 V POUT = 1.0 W IC = 100 mA IB = 20 mA f = 1.0 MHz f = 175 MHz RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
20 40 2.0 0.2 10 200 0.5 4.0 10 60
UNITS
V V V mA --Vdc pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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