VG36646141BT-8

VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package. Features Single 3.3V ( ± 0.3V ) power supply High speed clock cycle time : 8/10ns Fully synchronous with all signals referenced to a positive clock edge Programmable CAS Iatency (2,3) Programmable burst length (1,2,4,8,&Full page) Programmable wrap sequence (Sequential/Interleave) Automatic precharge and controlled precharge Auto refresh and self refresh modes Quad Internal banks controlled by A12 & A13 (Bank select) Each Bank can operate simultaneously and independently LVTTL compatible I/O interface Random column access in every cycle X16 organization Input/Output controlled by LDQM and UDQM 4,096 refresh cycles/64ms Burst termination by burst stop and precharge command Burst read/single write option The information shown is subject to change without notice. Document : 1G5-0127 Rev2 Page 1 VIS Pin Configuration VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE CAS RAS CS A13/BA0 A12/BA1 A10 A0 A1 A2 A3 VDD Preliminary VG36641641BT CMOS Synchronous Dynamic RAM VG36641641 (2) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49...