4/194/304 x 4 - Bit CMOS Dynamic RAM
VIS
Description or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
VG26(V)(S)17400...
Description
VIS
Description or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).
Features Single 5V ( ± 10 %) or 3.3V ( ± 10 %) only power supply High speed tRAC access time : 50/60 ns Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.) Fast Page Mode access I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) 2048 refresh cycles in 32 ms (Std) or 128ms (S - version) 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version)
Document : 1G5-0142
Rev.1
Page 1
VIS
Pin configuration
26/24 - PIN 300mil Plastic SOJ
VSS DQ4 DQ3 CAS OE A9 VCC DQ1 DQ2 WE RAS NC
1 2 3 4 5 6 26 25 24 23 22 21
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM
VG26(V) (S)17400EJ
A10 A0 A1 A2 A3 VCC
8 9 10 11 12 13
19 18 17 16 15 14
A8 A7 A6 A5 A4 VSS
Pin Description
Pin Name A0 - A10 Function Address inputs - Row address - Column ad...
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