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VFT80-28

Advanced Semiconductor

VHF POWER MOSFET N-Channel Enhancement Mode

VFT80-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT80-28 is Designed for General Purpose Class B ...


Advanced Semiconductor

VFT80-28

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Description
VFT80-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT80-28 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: PG = 10 dB Typical at 175 MHz 10:1 Load VSWR Capability Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCB VCE PDISS TJ T STG θ JC O I GH 10 A DIM MINIMUM inches / mm MAXIMUM inches / mm 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 1.5 OC/W O A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10705 NONE CHARACTERISTICS SYMBOL BV DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ TC = 25 OC TEST CONDITIONS ID = 100 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 2 A VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V MINIMUM 60 TYPICAL MAXIMUM 5.0 1.0 UNITS V mA µA V mS 1.0 1200 105 165 20 10 50 12 60 6.0 VDS = 28 V VDD = 28 V VGS = 0 V IDQ = 25 mA f = 1.0 MHz Pout = 80 W f = 175 MHz pF dB % VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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