VFT150-50

VFT150-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: PG = 13.5 dB Typical at 175 MHz 10:1 Load VSWR Capability Omnigold™ Metalization System S D Ø.125 NOM. C B G E H D G F S I J K MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm ID VDSS VGS PDISS TJ T STG θ JC 16 A 125 V ± 30 V 300 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.6 OC/W O O O A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10709 NONE CHARACTERISTICS SYMBOL BV DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ ID = 50 mA VDS = 50 V VDS = 0 V VDS = 10 V VDS = 10 V VDS = 50 V TC = 25 OC TEST CONDITIONS VGS = 0 V VGS = 20 V ID = 100 mA ID = 5 A VGS = 0 V f = 1.0 MHz f = 175 MHz MINIMUM 125 TYPICAL MAXIMUM UNITS 5.0 1.0 5.0 V mA µA V mS 1.0 3,000 290 130 28 13 45 13.5 55 pF dB % VDD = 50 V IDQ = 250 mA Pout = 150 W VSWR = 10:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are su...