HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC
V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
35
35...
Description
MOSEL VITELIC
V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
35
35 ns 18 ns 14 ns 70 ns
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC) Max. Column Address Access Time, (tCAA) Min. Fast Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC)
40
40 ns 20 ns 15 ns 75 ns
45
45 ns 22 ns 17 ns 80 ns
50
50 ns 24 ns 19 ns 90 ns
Features
s 256K x 16-bit organization s EDO Page Mode for a sustained data rate of 71 MHz s RAS access time: 35, 40, 45, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, and Self Refresh s Optional Self Refresh (V53C16258SL) s Refresh Interval: Standard: 512 cycles/8ms s Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages s Single +3.3V ± 0.3V Power Supply s TTL Interface
Description
The V53C16258L is a 262,144 x 16 bit highperformance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The V53C16258L has symmetric address and accepts 512 cycle 8ms interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits, within a page, with cycle times as short as 15ns. The V53C16258L is ideally suited for a wide variety of high performance portable computer systems and peripheral applications.
Device Usage Cha...
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