Document
MOSEL VITELIC
V29LC51002 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
s s s s s 256Kx8-bit Organization Address Access Time: 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 30µs (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Low VCC Program Inhibit Below 3.5V CMOS and TTL Interface Packages: – 32-pin Plastic DIP – 32-pin PLCC
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The V29LC51002 is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The V29LC51002 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.
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Device Usage Chart
Operating Temperature Range 0°C to 70°C Package Outline P • J • Access Time (ns) 90 • Temperature Mark Blank
V29LC51002 Rev. 0.5 October 2000
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MOSEL VITELIC
V 29 LC 51 002 –
V29LC51002
OPERATING VOLTAGE 51: 5V
DEVICE 90: 90ns
SPEED
PKG. P = PDIP J = PLCC
C51002-01
Pin Configurations
VCC WE A12 A15 A16 NC
N/C A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 32-Pin PDIP 26 Top View 25 24 23 22 21 20 19 18 17
51002-02
VCC WE A17 A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
4
3
2
1 32 31 30 29 28 27 26 25 24 23 22 21
A17
A7 A6 A5 A4 A3 A2 A1 A0 I/O0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
A14 A13 A8 A9 A11 OE A10 CE I/O7
32 Pin PLCC Top View
I/O1
I/O2
I/O3
I/O4
I/O5
GND
I/O6
51002-03
Pin Names
A0–A17 I/O0–I/O7 CE OE WE VCC GND NC Address Inputs Data Input/Output Chip Enable Output Enable Write Enable 5V ± 10% Power Supply Ground No Connect
V29LC51002 Rev. 0.5 October 2000
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MOSEL VITELIC
Functional Block Diagram
2,097,152 Bit Memory Cell Array
V29LC51002
X-Decoder
A0–A17
Address buffer & latches
Y-Decoder
CE OE WE
Control Logic
I/O Buffer & Data Latches
I/O0–I/O7
51002-07
Capacitance (1,2)
Symbol
CIN COUT CIN2
Parameter
Input Capacitance Output Capacitance Control Pin Capacitance
Test Setup
VIN = 0 VOUT = 0 VIN = 0
Typ.
6 8 8
Max.
8 12 10
Units
pF pF pF
NOTE: 1. Capacitance is sampled and not 100% tested. 2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz.
Latch Up Characteristics(1)
Parameter
Input Voltage with Respect to GND on A9, OE Input Voltage with Respect to GND on I/O, address or control pins VCC Current NOTE: 1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time.
Min.
-1 -1 -100
Max.
+13 VCC + 1 +100
Unit
V V mA
AC Test Load
+5.0 V IN3064 or Equivalent Device Under Test IN3064 or Equivalent CL = 100 pF 6.2 kΩ IN3064 or Equivalent IN3064 or Equivalent
51002-08
2.7 kΩ
V29LC51002 Rev. 0.5 October 2000
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Absolute Maximum Ratings(1)
Symbol
VIN VIN VCC TSTG TOPR IOUT
V29LC51002
Parameter
Input Voltage (input or I/O pins) Input Voltage (A9 pin, OE) Power Supply Voltage Storage Temerpature (Plastic) Operating Temperature Short Circuit Current(2)
Commercial
-2 to +7 -2 to +13 -0.5 to +5.5 -65 to +125 0 to +70 200 (Max.)
Unit
V V V °C °C mA
NOTE: 1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter Name
VIL VIH IIL IOL VOL VOH ICC1
Parameter
Input LOW Voltage Input HIGH Voltage Input Leakage Current Output Leakage Current Output LOW Voltage Output HIGH Voltage Read Current
Test Conditions
VCC = VCC Min. VCC = VCC Max. VIN = GND to VCC, VCC = VCC Max. VOUT = GND to VCC, VCC = VCC Max. VCC = VCC Min., IOL = 2.1mA VCC = VCC Min, IOH = -400µA CE = OE = VIL, WE = VIH, all I/Os open, Address input = VIL/VIH, at f = 1/tRC Min., VCC = VCC Max. CE = WE = VIL, OE = VIH, VCC = VCC Max. CE = OE = WE = VIH, VCC = VCC Max. CE = OE = WE = VCC – 0.3V, VCC = VCC Max. CE = OE = VIL, WE = VIH CE = OE = VIL, WE = VIH, A9 = VH Max.
Min.
— 2 — — — 2.4 —
Max.
0.8 — ±1 ±10 0.4 — 40
Unit
V V µA µA V V mA
ICC2 ISB ISB1 VH IH
Write Current TTL Standby Current CMOS Standby Current Device ID Voltage for A9 Device ID Current for A9
— — — 11.5 —
50 2 100 12.5 50
mA mA µA V µA
V29LC51002 Rev. 0.5 October 2000
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MOSEL VITELIC
AC Electrical Characteristics
(over all temperature ranges) Read Cycle
Parameter Name
tR.