V29C31004T

MOSEL VITELIC V29C31004T/V29C31004B 4 MEGABIT (524,288 x 8 BIT) 3.3 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 90, 120 ns Single 3.3V ± 0.3 Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 60µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 16mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 50µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 2.5V Self-timed write/erase operations with end-of-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in two versions – V29C31004T (Top Boot Block) – V29C31004B (Bottom Boot Block) Packages: – 32-pin TSOP-I – 32-pin PLCC s s s s s s s The V29C31004T/V29C31004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 3.3 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The V29C31004T/V29C31004B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The V29C31004T/V29C31004B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also su...