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VR4N

Toshiba Semiconductor

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)


Description
TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. · · · · Maximum Ratings (Ta = 25°C) Characteristics Repetitive pe...



Toshiba Semiconductor

VR4N

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