VQ3001P

VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 –30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = –12 V VGS(th) (V) 0.8 to 2.5 –2 to –4.5 ID (A) 0.85 –0.6 FEATURES D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code P Device Marking Top View VQ3001J “S” fllxxyy VQ3001P “S” fllxxyy Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C VQ3001P TA= 25_C TA= 100_C VGS ID IDM PD RthJA TJ, Tstg Symbol V...