2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660 VQ1...
2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660 VQ1004J/P
V(BR)DSS Min (V)
60
rDS(on) Max (W)
3 @ VGS = 10 V 3.5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2.5
ID (A)
1.1 0.46
FEATURES
D D D D D Low On-Resistance: 1.3 W Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,
Transistors, etc. D Battery Operated Systems D Solid-State Relays
Dual-In-Line TO-205AD (TO-39)
N S 1 2N6660 “S” fllxxyy 2 G 3 D “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code N Device Marking Side View D1 S1 G1 NC G2 S2 D2 D4 S4 G4 NC G3 S3 D3 N N Device Marking Top View VQ1004J “S” fllxxyy
1 2 3 4 5 6 7
14 13 12 11 10 9 8
VQ1004P “S” fllxxyy
“S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code
Top View 2N6660
Top View Plastic: VQ1004J Sidebraze: VQ1004P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambientb TC= 25_C TC= 100_C TC= 25_C TC= 100_C
Total Quad VQ1004J/P Unit
V
Symbol
VDS VGS ID IDM PD R...