VP3203

Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►High input impedance and high gain ►►Excellent thermal stability ►►Integral source-to-drain diode Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. ►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number Package Option VP3203N3-G 3-Lead TO-92 VP3203N3-G P002 Packing 1000/Bag BVDSS/BVDGS -30V RDS(ON) (max) 0.6Ω ID(ON) (min) -4.0A VP3203N3-G P003 VP3203N3-G P005 3-Lead TO-92 Pin Configuration 2000/Reel V...