Document
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VP02C
I
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVcss I BVOGS
-160V
-200V
ROS(ON)
(max)
160
160
IO(ON)
(min)
O.7SA
O.7SA
TO-39
Order Number I Package TO-92
VP0216N2
VP0216N3
VP0220N2
VP0220N3
TO-220 VP0216NS VP0220NS
Features
D Freedom from secondary breakdown
o Low power drive requirement
D Ease of paralleling
o Low CISS and fast switching speeds
D Excellent thermal stability
o Integral Source-Drain diode
D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runawa.