fully autoprotected Power MOSFET
®
VND1NV04 / VNN1NV04 / VNS1NV04
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VND1NV04 VNN1NV04 VNS1NV04
RDS(o...
Description
®
VND1NV04 / VNN1NV04 / VNS1NV04
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VND1NV04 VNN1NV04 VNS1NV04
RDS(on) 250 mΩ
Ilim 1.7 A
Vclamp
2
40 V
1 2
3
n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT
SOT-223
SO-8
3 1
TO-252 (DPAK)
PIN
n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE
ORDER CODES: TO-252 (DPAK) SOT-223 SO-8 VND1NV04 VNN1NV04 VNS1NV04
POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET
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DESCRIPTION The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM
MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
DRAIN
2 Overvoltage Clamp
INPUT
1
Gate Control
Over Temperature
Linear Current Limiter
3
SOURCE
FC01000
February 2003
1/18
VND1NV04 / VNN1NV04 / VNS1NV04
ABSOLUTE MAXIMUM RATING
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dis...
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