VND670SP

VND670SP Dual high-side switch with dual Power MOSFET gate driver (bridge configuration) Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) t(s)1. Per each channel. 15A(1) 40V uc■ 5V logic level compatible inputs rod■ Gate drive for two external power MOSFET P■ Undervoltage and overvoltage shutdown te■ Overvoltage clamp le■ Thermal shutdown o■ Cross-conduction protection bs■ Current limitation O■ Very low standby power consumption ) -■ PWM operation up to 10 KHz t(s■ Protection against loss of ground and loss of cVCC Obsolete Produ■ Reverse battery protection 10 1 PowerSO-10 Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brak...