Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2410L/D
TMOS FET Transistor
N–Channel — Enhancement
VN2410L
3 DRAIN
2 GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C Derate above 25°C
VDSS VDGR
240 60
Vdc Vdc
VGS VGSM
± 20 ± 40
Vdc Vpk
ID 200 mAdc
IDM 500 mAdc
PD 350 mW 2.8 mW/°C
Operating and Storage Temperature THERMAL CHARACTERISTICS
TJ, Tstg
—
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds
RθJA TL
312.5 300
°C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage (VGS = 0, ID = 100 µA)
V(BR)DSS
Zero Gate Voltage.