VN2406L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2406L/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE VN2406L Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR 240 60 Vdc Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 mAdc IDM 500 mAdc PD 350 mW 2.8 mW/°C Operating and Storage Temperature THERMAL CHARACTERISTICS TJ, Tstg — °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds RθJA TL 312.5 300 °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol STATIC CHARACTERISTICS Drain – Source Breakdown Voltage (VGS = 0, ID = 100 µA) Ze...