VN0300L

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN0300L/D TMOS FET Transistor N–Channel — Enhancement 2 GATE 3 DRAIN VN0300L Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 — Unit V V Vdc Vpk mA mA mW mW/°C °C 1 2 3 CASE 29–04, STYLE 22 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds Symbol RθJA TL Max 312.5 300 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS Drain – Source Breakdown Voltage (VDS = 0, ID = 10 µA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125°C) Gate–Body Leakage (VDS = 0, VGS = ±30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On–State Drain Current(1) (VDS = VGS, ID = 1.0 mA) Drain–Source On Resistance(1) (VGS = 5.0 V, ID = 0.3 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 m s, Duty Cycle V(BR)DSS IDSS — — IGSS VGS(th) ID(on) rDS(on) — — gfs 200 3.3 1.2 — mS — 0.8 1.0...