ZDT758

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT758 C1 C1 C2 C2 PARTMARKING DETAIL – T758 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -400 -400 -5 -1 -0.5 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 354 ZDT758 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) MIN. -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -0.9 50 50 40 50 20 140 2000 MHz pF ns ns TYP. MAX. UNIT V V V nA nA nA V V V V V CONDITIONS. IC=-100µ A IC=-...