Document
Z01
Datasheet
Standard 1 A Triacs
A2
G A1
A2
A1 A2 G
SOT-223
A1 G A2
TO-92
A2
A1 G SMBflat-3L
Features
•
On-state rms current, IT(RMS) 1 A
•
Repetitive peak off-state voltage, VDRM/VRRM 600 or 800 V
•
Triggering gate current, IGT (Q1) 3 to 25 mA
Applications
• AC switching • Home appliances
Description
The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontroller.
Product status link Z01
Product summary
IT(RMS)
1A
VDRM/VRRM
600, 800 V
IGTstandard
3 to 25 mA
DS2116 - Rev 13 - July 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
Z01
Characteristics
1
Characteristics
Symbol
IT(RMS)
ITSM I2t dl/dt IGM PG(AV) Tstg Tj
Table 1. Absolute maximum ratings
Parameters RMS on-state current (full sine wave)
SOT-223 TO-92
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
SMBflat-3L F = 50 Hz F = 60 Hz tp = 10 ms
F = 120 Hz
tp = 20 µs
Ttab = 90 °C TL = 50 °C Ttab = 107 °C tp = 20 ms tp = 16.7 ms
Value
1
8 8.5 0.35
Tj = 125 °C
20
Tj = 125 °C Tj = 125 °C
1 1 -40 to +150 -40 to +125
Unit
A
A A2s A/µs A W °C °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameters
IGT(1)
VGT VGD IH(2)
VD = 12 V, RL = 30 Ω
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IT = 50 mA
IL
IG = 1.2 IGT
dV/dt(2) (dV/dt)c(2)
VD = 67 % VDRM gate open, Tj = 110 °C (dI/dt)c = 0.44 A/ms, Tj = 110 °C
Quadrant
I - II - III IV All All
I - III - IV II
03 3 Max. 5 Max. Min. Max. 7 Max. 7 Max. 15 Min. 10 Min. 0.5
Z01
07 09
5
10
7
10
1.3
0.2
10 10
10 15 20 25
20 50
1
2
1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Unit 10 25
mA 25
V V 25 mA 25 mA 50 100 V/µs 5 V/µs
DS2116 - Rev 13
page 2/16
Z01
Characteristics
Table 3. Static electrical characteristics
Symbol
Test conditions
VT(1) VTO(1)
Rd IDRM IRRM
ITM = 1.4 A, tp = 380 µs Threshold on-state voltage Dynamic resistance
VDRM = VRRM
1. For both polarities of A2 referenced to A1
Tj 25 °C 125 °C 125 °C 25 °C 125 °C
Value Unit
Max. 1.60 V
Max. 0.95 V
Max. 400 mΩ
5
µA
Max.
0.5 mA
Symbol
Table 4. Thermal resistance Parameters
Rth(j-t)
Max. junction to tab (AC)
Rth(j-l)
Max. junction to lead (AC)
Rth(j-a)
Junction to ambient (S(1) = 5 cm²) Junction to ambient
1. Copper surface under tab.
SOT-223 SMBflat-3L
TO-92 SOT-223 SMBflat-3L
TO-92
Max. value
Unit
25
14
60 °C/W
60
75
150
DS2116 - Rev 13
page 3/16
Z01
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state RMS current (full cycle)
P(W)
1.50
α =180 °
1.25
1.00
0.75
0.50
0.25
180°
IT(RMS) (A) 0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 2. RMS on-state current versus lead (TO-92) or tab (SOT-223, SMBflat-3L) temperature (full cycle)
IT(RMS)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
SOT-223 TO-92
SMBflat-3L
Tlead or Ttab (°C)
50
75
100
125
Figure 3. On-state rms current versus ambient temperature(free air convection full cycle)
IT(RMS)(A)
1.2
1.0
Rth(j-a) = 60°C/W
(SOT-223)
0.8
0.6
0.4
0.2
0.0 0
Rth(j-a) = 150°C/W (TO-92)
Tamb (°C)
25
50
75
Rth (j-a) = 100°C/W (SMBflat-3L)
100
125
Figure 4. Relative variation of thermal impedance versus pulse duration (Zth(j-a))
K=[Z th(j-a) /Rth(j-a) ]
1.00
Z01xxA
Z01xxMUF Copper surface area
= 5cm²
0.10
Z01xxN
0.01 1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tp(s)
1.0E+02 1.0E+03
Figure 5. Relative variation of holding current and latching current versus junction temperature (typ. values)
2.5 IH, IL [ Tj] /IH, IL [Tj=25°C]
Figure 6. Relative variation of gate trigger current (IGT) and voltage (VGT) versus junction temperature
IGT, V GT[T j] / IGT, V GT[T j=25 ° C] 3.0
2.0
1.5
1.0
IL
0.5
Tj (°C)
IH
0.0
-50
-25
0
25
50
75
100
125
2.5
IGT Q1-Q2
2.0
IGT Q3
IGT Q4
1.5
1.0 VGT Q1-Q2-Q3-Q4 0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
DS2116 - Rev 13
page 4/16
Z01
Characteristics (curves)
Figure 7. Surge peak on-state current versus number of cycles
9 ITSM(A)
8 7
6
5
4
3
2 Repetitive
1 Tamb = 95 °C 0
1
Non repetitive Tjinitial = 25 °C
10
T = 20 ms One cy cle
Number of cycles
100
1000
Figure 8. Non-repetitive surge peak on-state current and corresponding value of I2t sinusoidal pulse width
ITSM (A), I2t (A2s )
100. 0
dI/dt li mi tati on : 20A/µs
10. 0
Tj initial = 25°C ITSM
.