Document
YG801C09R
SCHOTTKY BARRIER DIODE
(90V / 5A TO-22OF15)
Outline Drawings
10±0.5 ø3.2
+0.2 -0.1
4.5±0.2 2.7±0.2 6.3
2.7±0.2 3.7±0.2
1.2±0.2 13Min
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.7±0.2 2.54±0.2
0.6
+0.2 -0
2.7±0.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=117°C Square wave Sine wave 10ms Conditions
Rating 90 100 1500 5* 60 +150 -40 to +150
Unit V V V A A °C °C
* Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=2.0A VR=VRRM Junction to case Max. 0.9 2.0 5.0 Unit V mA °C/W
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3
** Rating per element
N·m g
(90V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
YG801C09R
Reverse Characteristic (typ.)
Tj=150 C
o
10
10
1
Tj=125 C
o
Tj=150 C Tj=125 C Tj=100 C Tj=25 C
o o o
o
Reverse Current (mA)
Forward Current (A)
10
0
Tj=100 C
o
10
-1
1
IF
Tj=25 C
o
IR
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-2
10
-3
0
10
20
30
40
50
60
70
80
90
100 110
VF
Forward Voltage (V)
VR
Reverse Voltage (V)
Forward Power Dissipation
4.0
14
Reverse Power Dissipation
DC
(W)
(W)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
Io
12
360°
Forward Power Dissipation
λ 360°
Reverse Power Dissipation
10
VR
Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 o Square wave λ=180 DC
o
8
α
6
α =180
o
4
2
Per 1element
WF
0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
PR
0 0 20 40 60 80 100
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
Current Derating (Io-Tc)
160 150 140 130 1000
Junction Capacitance Characteristic (typ.)
DC
Case Temperature
Junction Capacitance (pF) Cj
( C)
o
120 110 100 90 80 0 1 2 3 4 5
360° λ Io
VR=50V
Sine wave λ=180 o Square wave λ=180 Square wave λ=120
o
o
100
Square wave λ=60
o
Tc
10 6 7 8 10 100
Io
Average Output Current
(A)
VR
Reverse Voltage (V)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
(90V / 5A TO-22OF15)
YG801C09R
Surge Capability
1000
Peak Half - Wave Current IFSM
(A)
100 10 1 10 100
Number of Cycles at 50Hz
Transient Thermal Impedance
10
2
Transient Thermal Impedance
( C/W)
10
1
o
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
.