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YG801C09R Dataheets PDF



Part Number YG801C09R
Manufacturers Fuji Electric
Logo Fuji Electric
Description SCHOTTKY BARRIER DIODE
Datasheet YG801C09R DatasheetYG801C09R Datasheet (PDF)

YG801C09R SCHOTTKY BARRIER DIODE (90V / 5A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC-67 Applications High speed power switching. Connection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage .

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YG801C09R SCHOTTKY BARRIER DIODE (90V / 5A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC-67 Applications High speed power switching. Connection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=117°C Square wave Sine wave 10ms Conditions Rating 90 100 1500 5* 60 +150 -40 to +150 Unit V V V A A °C °C * Out put current of centertap full wave connection. Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=2.0A VR=VRRM Junction to case Max. 0.9 2.0 5.0 Unit V mA °C/W Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 ** Rating per element N·m g (90V / 5A TO-22OF15) Characteristics Forward Characteristic (typ.) YG801C09R Reverse Characteristic (typ.) Tj=150 C o 10 10 1 Tj=125 C o Tj=150 C Tj=125 C Tj=100 C Tj=25 C o o o o Reverse Current (mA) Forward Current (A) 10 0 Tj=100 C o 10 -1 1 IF Tj=25 C o IR 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -2 10 -3 0 10 20 30 40 50 60 70 80 90 100 110 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 4.0 14 Reverse Power Dissipation DC (W) (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Io 12 360° Forward Power Dissipation λ 360° Reverse Power Dissipation 10 VR Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 o Square wave λ=180 DC o 8 α 6 α =180 o 4 2 Per 1element WF 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 PR 0 0 20 40 60 80 100 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 160 150 140 130 1000 Junction Capacitance Characteristic (typ.) DC Case Temperature Junction Capacitance (pF) Cj ( C) o 120 110 100 90 80 0 1 2 3 4 5 360° λ Io VR=50V Sine wave λ=180 o Square wave λ=180 Square wave λ=120 o o 100 Square wave λ=60 o Tc 10 6 7 8 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (90V / 5A TO-22OF15) YG801C09R Surge Capability 1000 Peak Half - Wave Current IFSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 Transient Thermal Impedance ( C/W) 10 1 o 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) .


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