®
SD57030-01
RF POWER TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELL...
®
SD57030-01
RF POWER
TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE
s s s s
DESCRIPTION The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.
M250 epoxy sealed ORDER CODE BRANDING SD57030-01 XSD57030-01
PIN CONNECTION
1. Drain 2. Gate
3.Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70 C) Max. O perating Junction Temperature Storage T emperature
o
Value 65 ± 20 4 74 200 -65 to 150
Uni t V V A W
o o
C C
THERMAL DATA
R th (j-c) Junction-Case Thermal Resistance 1.75
o
C/W
January 2000
1/7
SD57030-01
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC
Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 58 34 2.4 Min. ...
