N-Channel Enhancement Mode Dual DMOS FET
N-Channel Enhancement Mode Dual DMOS FET
CORPORATION
SD411
FEATURES DESCRIPTION The SD411 is constructed utilizing Calo...
Description
N-Channel Enhancement Mode Dual DMOS FET
CORPORATION
SD411
FEATURES DESCRIPTION The SD411 is constructed utilizing Calogic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent choice for instrumentation, communication, RF and Video designs. ORDERING INFOMATION APPLICATIONS Part Package Temperature Range -55oC to +150oC -55oC to +150oC
Normally "OFF" Configuration High Speed Switching. . . . . . . . . . under 1 ns (typically) Low Capacitance . . . . . . . . . ciss <3.5 pf (typically) Ultra Tight Matching Characteristics Pin Compatible to Industry Standard
Dual JFETs with Addition of Substrate Bias Pin
Wideband Differential Amplifiers Amplifiers Cascode High Intercept Point Balanced Mixers Oscillators High Speed Analog Comparators
PIN CONFIGURATION
SD411 TO-78 Hermetic Package XSD411 Sorted Chips in Carriers
TO-78
1 2 3 4 5 6 7
SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2
4 5 3 2 1
6 7
BOTTOM VIEW
C S2 G1 D2 D1 G2 S1
CD2
SD411
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) VDS VSD VDB VSB VGD VGS VGB VG1G2 VD1D2 VS1S2 ID Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +20V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +10V Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V Gate-Drain Voltage. . . . . . . . . . . . ....
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