XP6435

Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high-frequency amplification 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SA1022 × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –30 150 150 –55 to +150 Unit V V V mA mW ˚C 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 7W Internal Connection 1 Tr1 6 5 4 ˚C 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance *1 (Ta=25˚C) Symbol ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VBE fT NF Zrb Cre Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCB = –10V, IE = 1mA VCB = –10V, IE = 1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE...