XP611FH

Composite Transistors XP611FH Silicon PNP epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For switching/digital circuits 2.1±0.1 0.65 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0.7±0.1 UN111F+UN111H [Tr1] [Tr2] 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW ˚C ˚C 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 4S Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 –0.02 +0.05 1 Composite Transistors XP611FH (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 80 4.7 0.47 +30% –4.9 – 0.2 30 – 0.25 V V V MHz kΩ min ...