XP4683

Composite Transistors XP4683 NPN epitaxial planer transistor (Tr1) PNP epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high-frequency amplification (Tr1) For general amplification (Tr2) 0.65 2.1±0.1 s Features q q 2.0±0.1 1 2 3 6 5 4 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.2 0.9±0.1 0.7±0.1 0.65 s Basic Part Number of Element q 2SC2404+2SB709A 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Emitter to base voltage Collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 30 20 3 15 –60 –50 –7 –100 –200 150 150 –55 to +150 Unit V V V mA V V V mA mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: ER Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 –0.02 +0.05 1 Composite Transistors XP4683 (Ta=25˚C) Symbol VCBO VEBO hFE VBE Cre fT NF PG Conditions IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 6V, IC = –1mA VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA, f = 10.7MHz VCB = 6V, IE = –1mA, f = 200MHz VCB = 6V, IE = –1mA, f = 100MHz VCB = 6V, IE = –1mA, f = 100MHz 4...