XP4506

Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.65 q q q High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SD1915F × 2 elements 0.7±0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 50 20 25 300 500 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: EN Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance *1 (Ta=25˚C) Symbol VCEO ICBO IEBO hFE VBE VCE(sat) fT Cob Ron*1 1kΩ IB=1mA f=1kHz V=0.3V Conditions IC = 1mA, IB = 0 VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCB = 6V, IE = –4m...