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XP1D873

Panasonic Semiconductor
Part Number XP1D873
Manufacturer Panasonic Semiconductor
Description Silicon N-channel junction FET
Published Apr 16, 2005
Detailed Description Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02...
Datasheet PDF File XP1D873 PDF File

XP1D873
XP1D873

Overview
Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.
1±0.
1 0.
425 1.
25±0.
1 0.
425 0.
2±0.
05 0.
12 – 0.
02 +0.
05 For analog switching 0.
65 s Features q q q 0.
9± 0.
1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0 to 0.
1 2SK1103 × 2 elements 0.
7±0.
1 0.
2 Two elements incorporated into one package.
(Drain-coupled FETs) Reduction of the mounting area and a...


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