XP1554

Composite Transistors XP1554 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For high speed switching 0.65 s Features q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) Marking Symbol: EU Internal Connection 1 2 3 4 Tr1 5 Peak collector current Total power dissipation Overall Junction temperature Storage temperature 0 to 0.1 2SC3757 × 2 elements 0.7±0.1 0.2 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 2.0±0.1 1 2 3 5 0.65 4 0.2±0.1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10m...