XP132A1275SR

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075Ω (max) Ultra High-Speed Switching SOP - 8 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP132A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.075 Ω ( Vgs = -4.5V ) Rds (on) = 0.115 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP - 8 Pin Configuration S S S G 1 2 3 4 8 7 6 5 D D D D Pin Assignment PIN NUMBER 1-3 4 5-8 PIN NAME S G D FUNCTION Source Gate Drain u SOP - 8 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 + 12 -5 -20 -5 2.5 150 -55 to 150 UNITS V V A A A W O 1 2 3 4 8 7 6 5 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature C C O P - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a glass epoxy PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-So...