Composite Transistors
XP05554
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high ...
Composite
Transistors
XP05554
Silicon
NPN epitaxial planer
transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high speed switching
2.1±0.1
0.65
q q q
For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0 to 0.1
2SC3757 × 2 elements
1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2)
0.7±0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: HE Internal Connection
1 2 3 Tr1 6 5 4
Tr2
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
(Ta=25˚C)
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB ...