XN6543

Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm For low-noise amplification (2GHz band) 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 1.1–0.1 q 2SC3904 × 2 elements 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings 15 10 2 65 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 9Y Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Transition frequency Collector output capacitance Forward transfer gain Power gain Noise figure *1 (Ta=25˚C) Symbol ICBO IEBO hFE hFE (small/large)*1 fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC =...