XN6534

Composite Transistors XN6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC2404 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings 30 20 3 15 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7F Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Forward current transfer hFE ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Noise figure Power gain *1 (Ta=25˚C) Symbol VCBO VEBO hFE hFE (small/large)*1 VBE Cre fT NF PG Conditions IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA VCB = 6V, IE = –1mA, f = 10.7MHz VCB = 6V, IE = –1mA, f = 200MHz VCB = 6V, IE = –1mA, f = 100MHz VCB = 6V, IE = –1mA, f = ...