Document
Composite Transistors
XN6401
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15 6
2.8 –0.3
+0.2 +0.25
1.5 –0.05
0.65±0.15 1
0.3 –0.05
0.95
2.9 –0.05
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SB709A × 2 elements
1.1–0.1
0.4±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings –60 –50 –7 –100 –200 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2)
4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 5O Internal Connection
6 5 4 Tr1 1 2 3
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IB = 0 VCE = –10V, IC = –2mA VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 160 0.5 0.99 – 0.3 80 2.7 – 0.5 V MHz pF min –60 –50 –7 – 0.1 –100 460 typ max Unit V V V µA µA
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16–0.06
+0.2
s Basic Part Number of Element
+0.1
1.45±0.1
s Features
0.5 –0.05
+0.1
+0.1
1
Composite Transistors
PT — Ta
500
–60 Ta=25˚C IB=–300µA –250µA –40 –200µA –30 –150µA
XN6401
IC — VCE
–60 VCE= – 5V Ta=25˚C –50
IC — I B
Total power dissipation PT (mW)
Collector current IC (mA)
Collector current IC (mA)
400
–50
–40
300
–30
200
–20
–100µA
–20
100
–10
–50µA
–10
0 0 40 80 120 160
0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18
0 0 –100 –200 –300 –400
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base current IB (µA)
IB — VBE
–400 –350 VCE=–5V Ta=25˚C –200 –240
IC — VBE
–10
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–5V IC/IB=10
25˚C Ta=75˚C –25˚C
–3 –1 –0.3 –0.1 –0.03 –0.01 25˚C Ta=75˚C
Base current IB (µA)
–300 –250 –200 –150 –100 –50 0 0 –0.4 –0.8 –1.2 –1.6
Collector current IC (mA)
–160
–25˚C
–120
–80
–40
–0.003 –0.001 –1
0 0 –0.4 –0.8 –1.2 –1.6 –2.0
–3
–10
–30
–100 –300 –1000
Base to emitter voltage VBE (V)
Base to emitter voltage VBE
(V)
Collector current IC (mA)
hFE — IC
600 VCE=–10V 160 VCB=–10V Ta=25˚C
fT — I E
8
Cob — VCB
Collector output capacitance Cob (pF)
f=1MHz IE=0 Ta=25˚C
Forward current transfer ratio hFE
500
Transition frequency fT (MHz)
140 120 100 80 60 40 20
7 6 5 4 3 2 1 0 –1
400 Ta=75˚C 300 25˚C –25˚C 200
100
0 –1
–3
–10
–30
–100 –300 –1000
0 0.1
0.3
1
3
10
30
100
–2 –3 –5
–10
–20 –30 –50 –100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Composite Transistors
NF — IE
6 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C
20 18 16 VCB=–5V Rg=50kΩ Ta=25˚C
XN6401
NF — IE
300 200 hfe 100
h Parameter — IE
5
Noise figure NF (dB)
Noise figure NF (dB)
Parameter h
4
14
50 30 20 10 5 3 2 1 0.1 hre (×10–4) 0.2 0.3 0.5 1 2 3 VCE=–5V f=270Hz Ta=25˚C 5 10 hie (kΩ) hoe (µS)
12 10 8 6 4 2
f=100Hz
3
1kHz 10kHz
2
1
0 0.01 0.03
0.1
0.3
1
3
10
0 0.1
0.2 0.3 0.5
1
2
3
5
10
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
h Parameter — VCE
300 200 hfe 100 IE=2mA f=270Hz Ta=25˚C
Parameter h
50 30 20 hoe (µS) 10 5 3 2 1 –1 hre (×10–4) hie (kΩ)
–2 –3 –5
–10
–20 –30 –50 –100
Collector to emitter voltage VCE (V)
3
.