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XN6401 Dataheets PDF



Part Number XN6401
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet XN6401 DatasheetXN6401 Datasheet (PDF)

Composite Transistors XN6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SB709A × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base v.

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Composite Transistors XN6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SB709A × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –7 –100 –200 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5O Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IB = 0 VCE = –10V, IC = –2mA VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 160 0.5 0.99 – 0.3 80 2.7 – 0.5 V MHz pF min –60 –50 –7 – 0.1 –100 460 typ max Unit V V V µA µA Ratio between 2 elements 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.2 s Basic Part Number of Element +0.1 1.45±0.1 s Features 0.5 –0.05 +0.1 +0.1 1 Composite Transistors PT — Ta 500 –60 Ta=25˚C IB=–300µA –250µA –40 –200µA –30 –150µA XN6401 IC — VCE –60 VCE= – 5V Ta=25˚C –50 IC — I B Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400 –50 –40 300 –30 200 –20 –100µA –20 100 –10 –50µA –10 0 0 40 80 120 160 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 0 0 –100 –200 –300 –400 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE –400 –350 VCE=–5V Ta=25˚C –200 –240 IC — VBE –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) VCE=–5V IC/IB=10 25˚C Ta=75˚C –25˚C –3 –1 –0.3 –0.1 –0.03 –0.01 25˚C Ta=75˚C Base current IB (µA) –300 –250 –200 –150 –100 –50 0 0 –0.4 –0.8 –1.2 –1.6 Collector current IC (mA) –160 –25˚C –120 –80 –40 –0.003 –0.001 –1 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 –3 –10 –30 –100 –300 –1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=–10V 160 VCB=–10V Ta=25˚C fT — I E 8 Cob — VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 140 120 100 80 60 40 20 7 6 5 4 3 2 1 0 –1 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 –1 –3 –10 –30 –100 –300 –1000 0 0.1 0.3 1 3 10 30 100 –2 –3 –5 –10 –20 –30 –50 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Composite Transistors NF — IE 6 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 20 18 16 VCB=–5V Rg=50kΩ Ta=25˚C XN6401 NF — IE 300 200 hfe 100 h Parameter — IE 5 Noise figure NF (dB) Noise figure NF (dB) Parameter h 4 14 50 30 20 10 5 3 2 1 0.1 hre (×10–4) 0.2 0.3 0.5 1 2 3 VCE=–5V f=270Hz Ta=25˚C 5 10 hie (kΩ) hoe (µS) 12 10 8 6 4 2 f=100Hz 3 1kHz 10kHz 2 1 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter — VCE 300 200 hfe 100 IE=2mA f=270Hz Ta=25˚C Parameter h 50 30 20 hoe (µS) 10 5 3 2 1 –1 hre (×10–4) hie (kΩ) –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) 3 .


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